| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| NE6500379A-TI | KB | ||||
| NE68519 | NEC ELECTRONICS | NONLINEAR MODEL | 32 KB | 1 |  |
| NE625D | NEC ELECTRONICS | FM Receiver Circuit | 402 KB | 0 | |
| NE68119-T1 | California Eastern Labs | NPN SILICON HIGH FREQUENCY TRANSISTOR | 663 KB | 21 |  |
| NE657N | California Eastern Labs | NPN SILICON HIGH FREQUENCY TRANSISTOR | 663 KB | 21 | |
| NE645 | List of Unclassifed Manufacturers | Dolby Noise Reduction Circuit | 234 KB | 5 |  |
| NE606DK | List of Unclassifed Manufacturers | Dolby Noise Reduction Circuit | 234 KB | 5 | |
| NE6501077 | NEC ELECTRONICS | 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | 37 KB | 6 | |
| NE6510179A-T1-AK | NEC ELECTRONICS | 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | 37 KB | 6 | |
| NE651017-9AEO | NEC ELECTRONICS | 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | 37 KB | 6 | |
| NE699M01-T1 | NEC ELECTRONICS | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION | 50 KB | 6 | |
| NE651R479A-A | California Eastern Labs | MEDIUM POWER GaAs HJ-FET | 501 KB | 11 | |
| NE614N | California Eastern Labs | MEDIUM POWER GaAs HJ-FET | 501 KB | 11 | |
| NE645B | California Eastern Labs | MEDIUM POWER GaAs HJ-FET | 501 KB | 11 | |
| NE68819-T1-A | California Eastern Labs | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR | 347 KB | 20 | |
| NE650R279A-T1 | NEC ELECTRONICS | 0.2 W L, S-BAND POWER GaAs MES FET | 77 KB | 8 | |
