| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| P28F512-200 | x8 Flash EEPROM | 983 KB | 0 | ||
| P28F256A-120 | x8 Flash EEPROM | 1754 KB | 0 | ||
| P28F001BX-T120 | INTEL CORPORATION | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY | 436 KB | 33 |  |
| P28F010-200 | INTEL CORPORATION | x8 Flash EEPROM | 749 KB | 0 | |
| P281 | Polyfet RF Devices | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 38 KB | 2 |  |
| P28F020-120 | INTEL CORPORATION | 28F020 2048K (256K X 8) CMOS FLASH MEMORY | 878 KB | 38 | |
| P2804ND5G | List of Unclassifed Manufacturers | N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary | 518 KB | 8 |  |
| P28F256A-200 | List of Unclassifed Manufacturers | x8 Flash EEPROM | 893 KB | 0 | |
| P28F010 | List of Unclassifed Manufacturers | x8 Flash EEPROM | 893 KB | 0 | |
| P28F001BXT120 | List of Unclassifed Manufacturers | x8 Flash EEPROM | 893 KB | 0 | |
| P28F512-120 | INTEL CORPORATION | 512K(64Kx8)CMOS FLASH MEMORY | 1819 KB | 30 | |
| P28F002BC | INTEL CORPORATION | 512K(64Kx8)CMOS FLASH MEMORY | 1819 KB | 30 | |
| P28F002BC-T120 | INTEL CORPORATION | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY | 455 KB | 37 | |
| P28F001BXT-150 | INTEL CORPORATION | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY | 455 KB | 37 | |
| P28F020 | INTEL CORPORATION | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY | 455 KB | 37 | |
| P2804BDG | List of Unclassifed Manufacturers | N-Channel Logic Level Enhancement | 290 KB | 5 | |
