| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PDTA124ES126 | KB | ||||
| PDTA124EU115 | KB | ||||
| PDTA115EE | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 189 KB | 14 |  |
| PDTA114EE115 | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 189 KB | 14 | |
| PDTA114EU115 | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 189 KB | 14 | |
| PDTC123TS | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 189 KB | 14 | |
| PDTC144TS | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open | 181 KB | 14 | |
| PDTB113EK | NXP | PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ | 138 KB | 10 |  |
| PDTC114YU T/R | NXP | PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ | 138 KB | 10 | |
| PDTC123JE.115 | NXP | PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ | 138 KB | 10 | |
| PDTA123EEF | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ | 189 KB | 14 | |
| PDT20116 | Nihon Inter Electronics Corporation | THYRISTOR MODULE 200A / 1600V | 329 KB | 9 |  |
| PDTA114EK115 | Nihon Inter Electronics Corporation | THYRISTOR MODULE 200A / 1600V | 329 KB | 9 | |
| PDTA115EEF | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 189 KB | 14 | |
| PDTA143ZE115 | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 189 KB | 14 | |
| PDTA144TEF | NXP | PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open | 180 KB | 14 | |
