型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
PM50CTK060 | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT-BASE TYPE INSULATED PACKAGE | 144 KB | 6 |  |
PM5315-BI-P | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT-BASE TYPE INSULATED PACKAGE | 144 KB | 6 |  |
PM50RHA060 | MITSUBISHI ELECTRIC SEMICONDUCTOR | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
| 622 KB | 0 |  |
PM5365-PI | PMC-SIERRA, INC | VT/TU MAPPER AND M13 MULTIPLEXER | 1169 KB | 244 |  |
PM50CSE060 | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE | 131 KB | 6 |  |
PM5395-BI | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE | 131 KB | 6 |  |
PM50CSD120 | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT-BASE TYPE INSULATED PACKAGE | 133 KB | 8 |  |
PM5365-PI-P | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT-BASE TYPE INSULATED PACKAGE | 133 KB | 8 |  |
PM50RHB060 | MITSUBISHI ELECTRIC SEMICONDUCTOR | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
| 645 KB | 0 |  |
PM50RHA120 | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT BASE TYPE INSULATED PACKAGE | 2165 KB | 8 |  |
PM50CTJ060-3 | MITSUBISHI ELECTRIC SEMICONDUCTOR | INSULATED PACKAGE FLAT-BASE TYPE | 100 KB | 6 |  |
PM5390-FI | MITSUBISHI ELECTRIC SEMICONDUCTOR | INSULATED PACKAGE FLAT-BASE TYPE | 100 KB | 6 |  |
PM50502C | Hitachi Semiconductor | SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING | 291 KB | 5 |  |
PM5358-BI | Hitachi Semiconductor | SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING | 291 KB | 5 |  |
PM52AUBZ060 | Hitachi Semiconductor | SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING | 291 KB | 5 |  |
PM50RSD120 | MITSUBISHI ELECTRIC SEMICONDUCTOR | FLAT-BASE TYPE INSULATED PACKAGE | 144 KB | 9 |  |