| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RJFTV7PEM1G | KB | ||||
| RJFTV7PEM1N | KB | ||||
| RJH6V472MJ5GT50 | KB | ||||
| RJK0383DPA | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 114 KB | 5 |  |
| RJK0384DPA | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 113 KB | 5 | |
| RJK0389DPA | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RJP-50V101MH5-T2 | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RJHSE-5381-02 | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RJHSE-3081 | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RJHSE-338A | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RJHS-5384 | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RK10J11R0007A | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RJR24FW203M | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RK73B1ETTP180J | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RK73B1ETTP391J | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
| RK-403R1653A7W | RENESAS | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | 169 KB | 11 | |
