| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RMC10-200RFT | KB | ||||
| RMC10-634RFT | KB | ||||
| RMC116115K1 | KB | ||||
| RMPA2456 | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 |  |
| RMS56-PC1 | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RMC10-562JT | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RMC10-768RFT | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RMC16-10R0FT | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RMC18-112JT | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RMC10-4991FT | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RMC10-3092FT | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RMC1/10-5621FTP | FAIRCHILD | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier | 935 KB | 8 | |
| RM75TPM-2H | MITSUBISHI ELECTRIC SEMICONDUCTOR | DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE | 106 KB | 3 |  |
| RM73B2AT223J | MITSUBISHI ELECTRIC SEMICONDUCTOR | DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE | 106 KB | 3 | |
| RM73B1JT102J | MITSUBISHI ELECTRIC SEMICONDUCTOR | DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE | 106 KB | 3 | |
| RM73B2BT753J | MITSUBISHI ELECTRIC SEMICONDUCTOR | DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE | 106 KB | 3 | |
