| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| S2913AIF10 | KB | ||||
| S29JL064H90TFI00 | KB | ||||
| S29GL256N90TFIR10H | KB | ||||
| S29GL128P90TFCR10 | KB | ||||
| S29GL064N90TFI010 | SPANSION | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology | 3112 KB | 79 |  |
| S2AA-13 | SPANSION | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology | 3112 KB | 79 | |
| S2EB-48V | Nais(Matsushita Electric Works) | 4 AMP POLARIZED HIGH DENSITY RELAY WITH HIGH SENSITIVITY | 85 KB | 4 |  |
| S2JA-13 | Nais(Matsushita Electric Works) | 4 AMP POLARIZED HIGH DENSITY RELAY WITH HIGH SENSITIVITY | 85 KB | 4 | |
| S29GL064M90BAIR00 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
| S29GL064M11TAIR10 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
| S29GL064M90TFIR00 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
| S29GL064N90FFI010 | SPANSION | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology | 3112 KB | 79 | |
| S29GL128N90FFIR20 | SPANSION | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology | 3112 KB | 79 | |
| S29GL256N10FFI010 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |
| S29GL512N10TFI01 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |
| S29JL064H70TAI00 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |
