型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
---|---|---|---|---|---|
SPP2301 | SYNC POWER Crop. | P-Channel Enhancement Mode MOSFET | 219 KB | 8 | |
SPP80N04 | SYNC POWER Crop. | P-Channel Enhancement Mode MOSFET | 219 KB | 8 | |
SPP80N08 | SYNC POWER Crop. | P-Channel Enhancement Mode MOSFET | 219 KB | 8 | |
SPPH430200 | ALPS ELECTRIC CO.,LTD. | 2.2mm-travel Medium-sized Vertical Type | 111 KB | 2 | |
SPP20N60C3 | INFINEON | New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge | 1838 KB | 15 | |
SPP11N60C3 | INFINEON | Cool MOS? Power Transistor Feature New revolutionary high voltage technology | 659 KB | 16 | |
SPP20N60S5 | Infineon Technologies AG | Cool MOS? Power Transistor | 376 KB | 11 | |
SPP03N60S5 | Infineon Technologies AG | Cool MOS? Power Transistor Feature New revolutionary high voltage technology | 362 KB | 10 | |
SPP11N80C3 | Infineon Technologies AG | Cool MOS Power Transistor | 398 KB | 10 | |
SPP04N60C3 | INFINEON | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | 594 KB | 14 | |
SPP07N60S5 | Infineon Technologies AG | Cool MOS? Power Transistor Feature New revolutionary high voltage technology | 534 KB | 12 | |
SPP04N60S5 | INFINEON | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | 1001 KB | 11 | |
SPP11N60S5 | INFINEON | Cool MOS? Power Transistor Feature New revolutionary high voltage technology | 477 KB | 12 | |
SPP17N80C3 | INFINEON | New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge | 1413 KB | 13 | |
SPP08P06P | INFINEON | P-Channel Enhancement mode Avalanche rated dv/dt rated | 843 KB | 10 | |
SPP07N60C3 | INFINEON | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | 625 KB | 15 |