型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
SSM2165-2SZ-REEL7 | | | KB | | |
SSM6N15FU\DP | | | KB | | |
SSM6L12TU | Toshiba Semiconductor | High-Speed Switching Applications | 241 KB | 9 | |
SSM6P16FU | TOSHIBA | High Speed Switching Applications | 179 KB | 5 | |
SSM9563GM | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM9564GM | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM2211GS | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM2306-MINI-EVALZ | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM3J02F/DD | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM4953 | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM1953100E20F5FG800 | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM2013P | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM2161SPLIT | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM35 | Silicon Standard Corp. | P-channel Enhancement-mode Power MOSFET | 531 KB | 5 | |
SSM25G45EM | Silicon Standard Corp. | N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR | 262 KB | 4 | |
SSM2603CPZ | Silicon Standard Corp. | N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR | 262 KB | 4 | |