| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| TC58512BFTI | KB | ||||
| TC55NEM208AFTN70 | TOSHIBA | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | 107 KB | 10 | |
| TC5565PL15 | TOSHIBA | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | 107 KB | 10 | |
| TC55B465J-10 | TOSHIBA | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | 107 KB | 10 | |
| TC5562P-55 | TOSHIBA | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | 107 KB | 10 | |
| TC55257BFI-85L | TOSHIBA | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | 107 KB | 10 | |
| TC55257DFL-10 | TOSHIBA | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | 107 KB | 10 | |
| TC55187T-30 | TOSHIBA | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | 107 KB | 10 | |
| TC5516 | TOSHIBA | 2,048 WORD X 8 BIT CMOS STATIC RAM | 551 KB | 12 | |
| TC54VN3202ECB713 | TOSHIBA | 2,048 WORD X 8 BIT CMOS STATIC RAM | 551 KB | 12 | |
| TC54VN46 | TOSHIBA | 2,048 WORD X 8 BIT CMOS STATIC RAM | 551 KB | 12 | |
| TC53N2202ECTTR | TOSHIBA | 2,048 WORD X 8 BIT CMOS STATIC RAM | 551 KB | 12 | |
| TC54256 | TOSHIBA | 32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY | 545 KB | 11 | |
| TC54VC2602ECB713 | TOSHIBA | 32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY | 545 KB | 11 | |
| TC54VC2701ECB | TelCom Semiconductor, Inc | VOLTAGE DETECTOR | 50 KB | 3 | |
| TC528257J70 | TelCom Semiconductor, Inc | VOLTAGE DETECTOR | 50 KB | 3 |