| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| TC5565APL | TOSHIBA | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology | 119 KB | 9 |  |
| TC55464AP | TOSHIBA | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology | 119 KB | 9 | |
| TC55329AP-35 | TOSHIBA | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology | 119 KB | 9 | |
| TC554001AF-7L | TOSHIBA | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology | 119 KB | 9 | |
| TC5516APL2TESTDOTS | TOSHIBA | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology | 119 KB | 9 | |
| TC55257APL | TOSHIBA | TOSHIBA MOS MEMORY PRODUCTS | 189 KB | 8 | |
| TC551001CPL-70L | TOSHIBA | TOSHIBA MOS MEMORY PRODUCTS | 189 KB | 8 | |
| TC551001CPI-70 | TOSHIBA | 131,072 WORD x 8 BIT STATIC RAM | 588 KB | 14 | |
| TC551001CF-7 | TOSHIBA | 131,072 WORD x 8 BIT STATIC RAM | 588 KB | 14 | |
| TC551001CF-70V | TOSHIBA | 131,072 WORD x 8 BIT STATIC RAM | 588 KB | 14 | |
| TC551001AFI-85 | TOSHIBA | 131,072 WORD x 8 BIT STATIC RAM | 588 KB | 14 | |
| TC54VN6002EMB | TelCom Semiconductor, Inc | VOLTAGE DETECTOR | 50 KB | 3 |  |
| TC5501D | TelCom Semiconductor, Inc | VOLTAGE DETECTOR | 50 KB | 3 | |
| TC54VC5102EMB | TelCom Semiconductor, Inc | VOLTAGE DETECTOR | 50 KB | 3 | |
| TC541000P-20 | TelCom Semiconductor, Inc | VOLTAGE DETECTOR | 50 KB | 3 | |
| TC5358 | TelCom Semiconductor, Inc | VOLTAGE DETECTOR | 50 KB | 3 | |
