| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| TIM7179-4UL | TOSHIBA | HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz | 144 KB | 4 |  |
| TIM5359-8UL | Toshiba Semiconductor | HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz | 144 KB | 4 |  |
| TIM596416L | Toshiba Semiconductor | HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz | 144 KB | 4 | |
| TIM3742-8SL-341 | TOSHIBA | IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level | 255 KB | 4 | |
| TIM4450-4SL | TOSHIBA | IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level | 255 KB | 4 | |
| TIM4450-8 | TOSHIBA | IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level | 255 KB | 4 | |
| TIM3536-60 | TOSHIBA | MICROWAVE POWER GAAS FET | 130 KB | 4 | |
| TIL113.3S | TOSHIBA | MICROWAVE POWER GAAS FET | 130 KB | 4 | |
| TIL113.S | TOSHIBA | MICROWAVE POWER GAAS FET | 130 KB | 4 | |
| TIL191-11G | TOSHIBA | MICROWAVE POWER GAAS FET | 130 KB | 4 | |
| TIL111.300 | TOSHIBA | MICROWAVE POWER GAAS FET | 130 KB | 4 | |
| TIL111.300W | TOSHIBA | MICROWAVE POWER GAAS FET | 130 KB | 4 | |
| TIL111.3S | TOSHIBA | MICROWAVE POWER GAAS FET | 130 KB | 4 | |
| TIC236B | TOSHIBA | TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 | 1060 KB | 0 | |
| TICF246M | TOSHIBA | TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 | 1060 KB | 0 | |
| TIBPAL16L8-12CFN | TOSHIBA | TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 | 1060 KB | 0 | |
