型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
TSA5511T/C2 | | | KB | | |
TSAL7300 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA6380N | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5511TC4 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5511/C4 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSAL5100 | Vishay Siliconix | High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs | 141 KB | 6 | |
TSA6057T | PHILIPS SEMICONDUCTORS | Radio tuning PLL frequency synthesizers | 650 KB | 14 | |
TSAL7200 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA0813B | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5526A | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5526TM1 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA2501IF | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5059TS/C3 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5523 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5514C2 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |
TSA5511AT-C4 | Vishay Siliconix | High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs | 112 KB | 5 | |