| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BSY95A | Central Semiconductor Corp | Small Signal Transistors | 33 KB | 1 |  |
| BSS83PE6327 | Central Semiconductor Corp | Small Signal Transistors | 33 KB | 1 | |
| BST82215 | Central Semiconductor Corp | Small Signal Transistors | 33 KB | 1 | |
| BSX63-10 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 |  |
| BR93LC46F-NE2 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BR93LC46R-E2 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BR6265AF10LL | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BS62LV2009STI-70 | Brilliance Semiconductor | Very Low Power/Voltage CMOS SRAM 256K X 8 bit | 318 KB | 9 |  |
| BS2F7HZ0173 | Brilliance Semiconductor | Very Low Power/Voltage CMOS SRAM 256K X 8 bit | 318 KB | 9 | |
| BSR56T/R | Brilliance Semiconductor | TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 50MA I(DSS) | TO-236 | 65 KB | 0 | |
| BSR16R | Brilliance Semiconductor | TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 50MA I(DSS) | TO-236 | 65 KB | 0 | |
| BSO615NG | Infineon Technologies AG | SIPMOS Small-signal-Transistor | 531 KB | 8 |  |
| BSL211SPL6327 | Infineon Technologies AG | SIPMOS Small-signal-Transistor | 531 KB | 8 | |
| BQ2201SNTR | Infineon Technologies AG | SIPMOS Small-signal-Transistor | 531 KB | 8 | |
| BQ20Z95DBTR | TEXAS INSTRUMENTS | SBS 1.1-COMPLIANT GAS GAUGE and PROTECTION ENABLED WITH IMPEDANCE TRACK⑩ | 530 KB | 20 |  |
| BQ2056PN | TEXAS INSTRUMENTS | Low-Dropout Li-Ion Charge-Control ICs with AutoComp⑩ Charge-Rate Compensation | 125 KB | 12 | |
