| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BG3123R | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 |  |
| BFT21 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BFS75 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BFS78 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BFT17 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BFR92AW115 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BFS320 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BFQ18 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BF822215 | INFINEON | DUAL N-Channel MOSFET Tetrode | 183 KB | 8 | |
| BF998RA | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 158 KB | 9 |  |
| BFG505W | PHILIPS SEMICONDUCTORS | NPN 9 GHz wideband transistors | 148 KB | 16 |  |
| BDY95 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | 12 KB | 1 |  |
| BDY96 | Seme LAB | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 | 11 KB | 0 | |
| BDY98 | Seme LAB | Bipolar NPN Device | 11 KB | 1 | |
| BDY26 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 224 KB | 2 |  |
| BDX86C | Inchange Semiconductor Company Limited | isc Silicon PNP Darlington Power Transistor | 231 KB | 2 | |
