| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BSY84 | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-39 | 109 KB | 0 | ||
| BSV47 | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-39 | 109 KB | 0 | ||
| BSV48 | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-39 | 109 KB | 0 | ||
| BSX70 | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-39 | 109 KB | 0 | ||
| BSW67 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 |  |
| BSW84 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BSP60E6327 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BSP250115 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BSN6040AGHZ | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BSM-06BT1 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BSM100GB60DL | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BSM111R | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BSC029N025S G | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
| BS62LV8001EI-70 | Brilliance Semiconductor | Very Low Power/Voltage CMOS SRAM 1M X 8 bit | 265 KB | 9 |  |
| BS62LV4006SIP70 | Brilliance Semiconductor | Very Low Power CMOS SRAM 512K X 8 bit | 403 KB | 12 | |
| BR3510W | EIC discrete Semiconductors | SILICON BRIDGE RECTIFIERS | 49 KB | 2 |  |
