| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BB503C | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 217 KB | 11 |  |
| BB565E7902 | RENESAS | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | 217 KB | 11 | |
| BB609A | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 |  |
| BB3656SG | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BB8040 | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BBSP4CH30PQS | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BC212015BQ | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BC212015BR | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BC238BZL1 | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BC807W115 | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BC41B143A05U | SIEMENS SEMICONDUCTOR GROUP | Silicon Variable Capacitance Diodes | 93 KB | 2 | |
| BC384 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-18 | 116 KB | 0 | |
| BC857BL3 E6327 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-18 | 116 KB | 0 | |
| BCAOR | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-18 | 116 KB | 0 | |
| BC817DS | NXP | NPN general purpose double transistor | 135 KB | 7 |  |
| BCM5310KQM | NXP | NPN general purpose double transistor | 135 KB | 7 | |
