| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BDW54D | Bourns Electronic Solutions | PNP SILICON POWER DARLINGTONS | 120 KB | 5 | |
| BDW74AV | Bourns Electronic Solutions | PNP SILICON POWER DARLINGTONS | 120 KB | 5 | |
| BDX65L | Bourns Electronic Solutions | PNP SILICON POWER DARLINGTONS | 120 KB | 5 | |
| BDY78 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 300 KB | 2 | |
| BDY44 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistor | 207 KB | 2 | |
| BEAD120612oHM | Inchange Semiconductor Company Limited | Silicon NPN Power Transistor | 207 KB | 2 | |
| BF517 E6327 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistor | 207 KB | 2 | |
| BF517E6327 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistor | 207 KB | 2 | |
| BF961A | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
| BF885SG | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
| BFG10WX | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
| BF274 | Vishay Siliconix | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 50MA I(C) | TO-106 | 322 KB | 0 | |
| BF014E0823JDC | Vishay Siliconix | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 50MA I(C) | TO-106 | 322 KB | 0 | |
| BF1005SE6760 | Vishay Siliconix | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 50MA I(C) | TO-106 | 322 KB | 0 | |
| BF1012E6690 | Vishay Siliconix | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 50MA I(C) | TO-106 | 322 KB | 0 | |
| BFG92AX | NXP Semiconductors | NPN 5 GHz wideband transistor | 126 KB | 16 |