| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BDW51A | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 231 KB | 2 |  |
| BDP956E6327 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 231 KB | 2 | |
| BDS313 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 231 KB | 2 | |
| BeTaReSearch | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 231 KB | 2 | |
| BF-1210-05SV08-Y70 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 231 KB | 2 | |
| BDX83A | Inchange Semiconductor Company Limited | isc Silicon NPN Darlington Power Transistor | 229 KB | 2 | |
| BDX84A | Inchange Semiconductor Company Limited | isc Silicon PNP Darlington Power Transistor | 229 KB | 2 | |
| BDX84B | Inchange Semiconductor Company Limited | isc Silicon PNP Darlington Power Transistor | 229 KB | 2 | |
| BDY46 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 218 KB | 2 | |
| BF2040 E6814 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 218 KB | 2 | |
| BF410B | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 |  |
| BF389 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BF389B | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BF511215 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BF550R | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25MA I(C) | SOT-23 | 114 KB | 0 | |
| BF622E6327 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25MA I(C) | SOT-23 | 114 KB | 0 | |
