| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BFQ149 | NXP | PNP 5 GHz wideband transistor | 227 KB | 7 |  |
| BGA427 | Infineon Technologies AG | Si-MMIC-Amplifier in SIEGET 25-Technologie | 165 KB | 7 |  |
| BC394 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO18 | 14 KB | 1 |  |
| BCM4318KFBG | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO18 | 14 KB | 1 | |
| BD243B | ON Semiconductor | Complementary Silicon Plastic Power Transistors | 97 KB | 6 |  |
| BD239 | Savantic, Inc. | Silicon NPN Power Transistors | 90 KB | 3 |  |
| BTV2115KSF | Savantic, Inc. | Silicon NPN Power Transistors | 90 KB | 3 | |
| BZX79C3V9 | Taiwan Semiconductor Company, Ltd | 500mW,5% Tolerance Zener Diode | 330 KB | 4 |  |
| BGA622 | Infineon Technologies AG | Silicon Germanium Wide Band Low Noise Amplifier | 81 KB | 9 | |
| BFQ135 | PHILIPS SEMICONDUCTORS | NPN 6.5 GHz wideband transistor | 78 KB | 12 |  |
| BF545C | PHILIPS SEMICONDUCTORS | N-channel silicon junction field-effect transistors | 100 KB | 12 | |
| BLM18PG600SN1D | PHILIPS SEMICONDUCTORS | N-channel silicon junction field-effect transistors | 100 KB | 12 | |
| BSS123TA | PHILIPS SEMICONDUCTORS | N-channel silicon junction field-effect transistors | 100 KB | 12 | |
| BSP373 | INFINEON | SIPMOS Small-Signal Transistor | 278 KB | 8 |  |
| BQ2913 | INFINEON | SIPMOS Small-Signal Transistor | 278 KB | 8 | |
| BA5204 | INFINEON | 224 KB | 0 | |
