| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BCM4306KFB-P20 | KB | ||||
| BAS20LT1 | ON SEMICONDUCTOR | High Voltage Switching Diode | 128 KB | 6 |  |
| BCM5632EFB1KPB | ON SEMICONDUCTOR | High Voltage Switching Diode | 128 KB | 6 | |
| BD230 | Savantic, Inc. | Silicon NPN Power Transistors | 108 KB | 3 |  |
| BS616LV1010EI-70 | Savantic, Inc. | Silicon NPN Power Transistors | 108 KB | 3 | |
| BQ24010DRC | TEXAS INSTRUMENTS | SINGLE-CHIP, LI-ION CHARGE MANAGEMENT IC FOR HANDHELD APPLICATIONS (bq TINY) | 178 KB | 19 |  |
| BSM35GB120DN2 | eupec GmbH | IGBT Power Module | 259 KB | 10 |  |
| BGX50A | Infineon Technologies AG | Silicon Switching Diode Array | 69 KB | 6 |  |
| BGB203/1/S01 | Infineon Technologies AG | Silicon Switching Diode Array | 69 KB | 6 | |
| BLV99/SL | Infineon Technologies AG | RF Power Transistors for UHF | 27 KB | 0 | |
| BUZ72 | INFINEON | SIPMOS Power Transistor | 90 KB | 8 |  |
| BYD37M | EIC discrete Semiconductors | AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES | 117 KB | 2 |  |
| BUZ308 | SIEMENS SEMICONDUCTOR GROUP | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | 242 KB | 9 |  |
| BZ-3 | SIEMENS SEMICONDUCTOR GROUP | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | 242 KB | 9 | |
| BUK9520-55 | PHILIPS SEMICONDUCTORS | TrenchMOS transistor Logic level FET | 63 KB | 8 |  |
| BYV10-40 | PHILIPS SEMICONDUCTORS | Schottky barrier diodes | 20 KB | 4 | |
