| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BU3567F | KB | ||||
| BU2461-05 | KB | ||||
| BTA212X-800E | PHILIPS SEMICONDUCTORS | Three quadrant triacs guaranteed commutation | 49 KB | 7 |  |
| BTA16-700C | STMICROELECTRONICS | 16A TRIACS | 101 KB | 7 |  |
| BTA208S-600D | PHILIPS SEMICONDUCTORS | Three quadrant triacs guaranteed commutation | 47 KB | 6 | |
| BSS82C | Guangdong Kexin Industrial Co.,Ltd | PNP Silicon Switching Transistors | 41 KB | 2 |  |
| BSP350E6327(Q67000S227) | Guangdong Kexin Industrial Co.,Ltd | PNP Silicon Switching Transistors | 41 KB | 2 | |
| BSM35GD120DLC | eupec GmbH | IGBT-Module Maximum rated values | 97 KB | 8 |  |
| BQ29312ARTHRG4 | eupec GmbH | IGBT-Module Maximum rated values | 97 KB | 8 | |
| BQ29412PWR | TEXAS INSTRUMENTS | VOLTAGE PROTECTION FOR 2-, 3-, OR 4-CELL Li-Ion BATTERIES (2nd-LEVEL PROTECTION) | 158 KB | 13 |  |
| BSM100GAR120DN2 | TEXAS INSTRUMENTS | VOLTAGE PROTECTION FOR 2-, 3-, OR 4-CELL Li-Ion BATTERIES (2nd-LEVEL PROTECTION) | 158 KB | 13 | |
| BSM10GD100D | TEXAS INSTRUMENTS | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 10A I(C) | 309 KB | 0 | |
| BQ2018SN | TEXAS INSTRUMENTS | Power Minder⑩ IC | 124 KB | 21 | |
| BQ2018TS | TEXAS INSTRUMENTS | Power Minder⑩ IC | 124 KB | 21 | |
| BP104FS | OSRAM GmbH | Silizium-Pin-Fotodiode mit Tageslichtsperrfilter | 129 KB | 6 |  |
| BL8530-501SM | OSRAM GmbH | Silizium-Pin-Fotodiode mit Tageslichtsperrfilter | 129 KB | 6 | |
