| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BQ4016YMC-70 | TEXAS INSTRUMENTS | 1024Kx8 Nonvolatile SRAM | 858 KB | 11 |  |
| BQ20Z80DBTR-V102G4 | TEXAS INSTRUMENTS | SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK⑩ TECHNOLOGY FOR USE WITH THE bq29312A | 410 KB | 27 | |
| BQ20Z90DBT-V110 | TEXAS INSTRUMENTS | SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 | 496 KB | 25 | |
| BPW38 | FAIRCHILD | HERMETIC SILICON PHOTODARLINGTON | 184 KB | 4 |  |
| BP114 | FAIRCHILD | HERMETIC SILICON PHOTODARLINGTON | 184 KB | 4 | |
| BSM35GB120DLC | eupec GmbH | vorlafige Daten preliminary data | 87 KB | 8 |  |
| BSP304 | PHILIPS SEMICONDUCTORS | P-channel enhancement mode vertical D-MOS transistors | 75 KB | 9 |  |
| BSO613SPV | INFINEON | SIPMOS Small-Signal-Transistor | 90 KB | 9 |  |
| BR93LC46-W | Rohm | 64】16bits serial EEPROM | 94 KB | 11 |  |
| BR95320-WMN6TP | Rohm | Supply voltage 2.5V~5.5V/Operating temperature -40C~+85C type | 326 KB | 6 | |
| BR9040-W | Rohm | メモリLSI | 177 KB | 0 | |
| BR93LC46F-E1 | Rohm | メモリLSI | 177 KB | 0 | |
| BSY38 | Rohm | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-18 | 232 KB | 0 | |
| BSY27 | Rohm | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 | 232 KB | 0 | |
| BTA20-1000B | Rohm | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 | 232 KB | 0 | |
| BTA24-600C | Tiger Electronic Co.,Ltd | 25A TRIACS | 285 KB | 1 |  |
