型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
2N6849 | New Jersey Semi-Conductor Products, Inc. | P-CHANNEL ENHANCEMENT MOSFET | 95 KB | 1 | |
2N6028 | ON SEMICONDUCTOR | Programmable Unijunction Transistor | 77 KB | 6 | |
2N6045 | New Jersey Semi-Conductor Products, Inc. | POWER DERATING | 241 KB | 2 | |
2N6427 | ON Semiconductor | Darlington Transistors(NPN Silicon) | 116 KB | 6 | |
2N6798 | MICROSEMI CORPORATION | N-CHANNEL MOSFET | 174 KB | 3 | |
2N6075AG | ON SEMICONDUCTOR | Sensitive Gate Triacs Silicon Bidirectional Thyristors | 75 KB | 8 | |
2N6109 | New Jersey Semi-Conductor Products, Inc. | MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS | 193 KB | 2 | |
2N6052 | Seme LAB | Bipolar PNP Device in a Hermetically sealed TO3 | 16 KB | 1 | |
2N6490 | New Jersey Semi-Conductor Products, Inc. | SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS | 236 KB | 1 | |
2N6075A | New Jersey Semi-Conductor Products, Inc. | PEEK GATE TRIGGER CURRENT | 84 KB | 1 | |
2N6277 | New Jersey Semi-Conductor Products, Inc. | HIGH-POWER NPN SILICON TRANSISTORS | 248 KB | 2 | |
2N6784 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL ENHANCEMENT-MODE | 264 KB | 2 | |
2N6341 | New Jersey Semi-Conductor Products, Inc. | 25 AMPERE POWER TRANSISTORS | 198 KB | 2 | |
2N6508 | New Jersey Semi-Conductor Products, Inc. | THYRISTORS SILICON CONTROLLED RECTIFIERS | 204 KB | 2 | |
2N6111 | New Jersey Semi-Conductor Products, Inc. | MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS | 193 KB | 2 | |
2N6509 | New Jersey Semi-Conductor Products, Inc. | THYRISTORS SILICON CONTROLLED RECTIFIERS | 204 KB | 2 | |