| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2N6073B | New Jersey Semi-Conductor Products, Inc. | TRIAC, V(DRM) = 400V TO 499.9V | 68 KB | 1 |  |
| 2N6520 | Tiger Electronic Co.,Ltd | PNP EPITAXIAL PLANAR TRANSISTOR | 51 KB | 3 |  |
| 2N6037 | New Jersey Semi-Conductor Products, Inc. | COMPLEMENTARY SILICON DARLINGTON TRANSISTORS | 133 KB | 1 | |
| 2N6489 | New Jersey Semi-Conductor Products, Inc. | SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS | 236 KB | 1 | |
| 2N6504 | New Jersey Semi-Conductor Products, Inc. | THYRISTORS SILICON CONTROLLED RECTIFIERS | 204 KB | 2 | |
| 2N6845 | New Jersey Semi-Conductor Products, Inc. | P-CHANNEL ENHANCEMENT MOSFET | 82 KB | 1 | |
| 2N6071A | New Jersey Semi-Conductor Products, Inc. | PEEK GATE TRIGGER CURRENT | 84 KB | 1 | |
| 2N6043 | New Jersey Semi-Conductor Products, Inc. | POWER DERATING | 241 KB | 2 | |
| 2N6788 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL POWER MOSFETS | 164 KB | 1 | |
| 2N6901 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL ENHANCEMENT MOSFET | 118 KB | 1 | |
| 2N6790 | Seme LAB | N–CHANNEL POWER MOSFET | 45 KB | 2 |  |
| 2N6487 | New Jersey Semi-Conductor Products, Inc. | SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS | 236 KB | 1 | |
| 2N6426 | ON Semiconductor | Darlington Transistors(NPN Silicon) | 116 KB | 6 |  |
| 2N6027RLRAG | ON SEMICONDUCTOR | Programmable Unijunction Transistor | 77 KB | 6 |  |
| 2N6491G | ON SEMICONDUCTOR | Programmable Unijunction Transistor | 77 KB | 6 | |
| 2N6395 | New Jersey Semi-Conductor Products, Inc. | CASE TO-220AB | 153 KB | 1 | |
