| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 3N11SS355-TRB | KB | ||||
| 3N1224 | KB | ||||
| 3N1PEHH0063 | KB | ||||
| 3N163 | New Jersey Semi-Conductor Products, Inc. | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT | 123 KB | 1 |  |
| 3N108 | New Jersey Semi-Conductor Products, Inc. | NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS | 148 KB | 1 | |
| 3N164 | New Jersey Semi-Conductor Products, Inc. | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT | 123 KB | 1 | |
| 3N171 | New Jersey Semi-Conductor Products, Inc. | MOSFET SWITCHING | 119 KB | 1 | |
| 3N170 | New Jersey Semi-Conductor Products, Inc. | MOSFET SWITCHING | 119 KB | 1 | |
| 3N172 | New Jersey Semi-Conductor Products, Inc. | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT | 123 KB | 1 | |
| 3N187 | Vaishali Semiconductor | SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR | 486 KB | 8 |  |
| 3N161 | INTERSIL CORPORATION | N-CHANNEL JFET | 4130 KB | 122 |  |
| 3N191 | INTERSIL CORPORATION | N-CHANNEL JFET | 4130 KB | 122 | |
| 3N140 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL MOS FIELD-EFFECT TRANSISTOR | 117 KB | 1 | |
| 3N169 | New Jersey Semi-Conductor Products, Inc. | MOSFET SWITCHING | 119 KB | 1 | |
| 3N153 | ETC | SILICON INSULATED GATE FIELD EFFECT TRANSISTOR | 148 KB | 3 |  |
| 3N190 | INTERSIL CORPORATION | N-CHANNEL JFET | 4130 KB | 122 | |
