| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT30S20BCT | Advanced Power Technology | HIGH VOLTAGE SCHOTTKY DIODE | 0 KB | 4 |  |
| APT8030LVFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 63 KB | 4 | |
| APT60D60BG | MICROSEMI CORPORATION | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 254 KB | 4 |  |
| APT5024BLL | Advanced Power Technology | POWER MOS 7 MOSFET | 162 KB | 5 | |
| APT30D60BHB | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 126 KB | 4 | |
| APT8056BVFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 62 KB | 4 | |
| APT2X61D20J | Advanced Power Technology | ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES | 57 KB | 4 | |
| APT30M30JLL | Advanced Power Technology | POWER MOS 7 R MOSFET | 150 KB | 5 | |
| APT20M22LVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 64 KB | 4 | |
| APT5030BN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 51 KB | 4 | |
| APT8030LVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 60 KB | 4 | |
| APT5011JNF | Advanced Power Technology | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 46A I(D) | 230 KB | 0 | |
| APT2X100D120J | MICROSEMI CORPORATION | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 151 KB | 4 | |
| APT8065BVFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 63 KB | 4 | |
| APT50GF120LR | Advanced Power Technology | The Fast IGBT is a new generation of high voltage power IGBTs. | 37 KB | 3 | |
| APT10086BVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 66 KB | 4 | |
