| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT4014BVFR | Advanced Power Technology | POWER MOS V FREDFET | 73 KB | 4 |  |
| APT4016BVFR | Advanced Power Technology | POWER MOS V FREDFET | 72 KB | 4 | |
| APT5020BVFRG | Advanced Power Technology | POWER MOS V FREDFET | 72 KB | 4 | |
| APT60D120BG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 132 KB | 4 | |
| APT60GR120JRDX | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 132 KB | 4 | |
| APT1003RBLL | Advanced Power Technology | POWER MOS 7 MOSFET | 101 KB | 5 | |
| APT10021JLL | Advanced Power Technology | Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 155 KB | 5 | |
| APT20M20JLL | Advanced Power Technology | POWER MOS 7 MOSFET | 160 KB | 5 | |
| APT30M19JVFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs | 76 KB | 4 | |
| APT5010LLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 66 KB | 4 | |
| APT50GF120B2R | Advanced Power Technology | The Fast IGBT is a new generation of high voltage power IGBTs. | 37 KB | 3 | |
| APT6013LLL | MICROSEMI CORPORATION | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 200 KB | 5 |  |
| APT60GT60BR | Advanced Power Technology | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. | 24 KB | 2 | |
| APT6017JFLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 71 KB | 2 | |
| APT50M50L2LL | MICROSEMI CORPORATION | POWER MOS 7 R MOSFET | 98 KB | 5 | |
| APT40GP60J | Advanced Power Technology | POWER MOS 7 IGBT | 100 KB | 6 | |
