| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT8020JLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 69 KB | 2 |  |
| APT8024JLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 165 KB | 5 | |
| APT8024LFLL | MICROSEMI CORPORATION | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 245 KB | 5 |  |
| APT8020LLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 160 KB | 5 | |
| APT75GP120J | Advanced Power Technology | POWER MOS 7 IGBT | 105 KB | 6 | |
| APT6018JN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 61 KB | 4 | |
| APT60M75JFLL | Advanced Power Technology | POWER MOS 7 R FREDFET | 164 KB | 5 | |
| APT5014B2LC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
| APT35GP120B | Advanced Power Technology | Volts:1200V VF/Vce(ON):3.9V ID(cont):46Amps|Ultrafast IGBT Family | 82 KB | 0 | |
| APT4014BVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 64 KB | 4 | |
| APT30D30BCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 36 KB | 4 | |
| APT2X30D120J | Advanced Power Technology | ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES | 34 KB | 2 | |
| APT30M30B2LL | Advanced Power Technology | POWER MOS 7 R MOSFET | 152 KB | 5 | |
| APT30D20BCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 124 KB | 4 | |
| APT20GF120BRD | Advanced Power Technology | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. | 114 KB | 8 | |
| APT15D30BCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODES | 33 KB | 2 | |
