型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
APT2X101D20J | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 67 KB | 4 | |
APT1201R4BLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 69 KB | 2 | |
APT10050JVRF | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 69 KB | 2 | |
APT100GF60JR | Advanced Power Technology | The Fast IGBT is a new generation of high voltage power IGBTs. | 62 KB | 3 | |
APT13GP120K | Advanced Power Technology | POWER MOS 7 IGBT | 155 KB | 6 | |
APT1004R2KN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 51 KB | 4 | |
APT12057B2LL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 70 KB | 2 | |
APT15GT120BRDQ1G | Advanced Power Technology | Thunderbolt IGBT | 432 KB | 9 | |
APT20M13PVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 36 KB | 2 | |
APT1201R2SLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 69 KB | 2 | |
APT12040JLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 69 KB | 2 | |
APT1201R4SLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 69 KB | 2 | |
APT2X100D40J | MICROSEMI CORPORATION | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 151 KB | 4 | |
APT35GP120B2DF2 | MICROSEMI CORPORATION | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 151 KB | 4 | |
APT35GT120JU2 | MICROSEMI CORPORATION | ISOTOP Buck chopper Trench IGBT | 506 KB | 7 | |
APT6030BNR | MICROSEMI CORPORATION | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD
| 180 KB | 0 | |