型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
APT1001RSVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 71 KB | 4 | |
APT1002RCN | Advanced Power Technology | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 49 KB | 4 | |
APT10035B2FLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 92 KB | 5 | |
APT1003RSLL | Advanced Power Technology | POWER MOS 7 MOSFET | 101 KB | 5 | |
APT10040B2VFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 79 KB | 4 | |
APT1001RSVFR | Advanced Power Technology | POWER MOS V FREDFET | 123 KB | 4 | |
APT1001R6BN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 50 KB | 4 | |
APT10025PVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
APT10050LLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage | 68 KB | 2 | |
APT10086BLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
APT10090SLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 97 KB | 5 | |
APT11GP60K | Advanced Power Technology | POWER MOS 7 IGBT | 169 KB | 6 | |
APT12067LLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS | 70 KB | 2 | |
APT13GP120B | Advanced Power Technology | POWER MOS 7 IGBT | 409 KB | 6 | |
APT15D100B | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 122 KB | 4 | |
APT15DS30B | Advanced Power Technology | HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODE | 55 KB | 4 | |