| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BF182 | New Jersey Semi-Conductor Products, Inc. | Electrical characterlitics | 127 KB | 1 |  |
| BF1012 | SIEMENS SEMICONDUCTOR GROUP | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | 33 KB | 4 |  |
| BF1202R | NXP | N-channel dual-gate PoLo MOS-FETs | 189 KB | 15 |  |
| bf1211r | PHILIPS SEMICONDUCTORS | N-channel dual-gate MOS-FETs | 112 KB | 15 |  |
| BF1108 | NXP | Silicon RF switches | 72 KB | 10 | |
| BF1109WR | PHILIPS SEMICONDUCTORS | N-channel dual-gate MOS-FETs | 145 KB | 16 | |
| BF177 | PHILIPS SEMICONDUCTORS | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF1102 | PHILIPS SEMICONDUCTORS | Dual N-channel dual gate MOS-FET | 154 KB | 12 | |
| BF183 | ETC | TRANZYSTORY | 379 KB | 5 |  |
| BF185 | New Jersey Semi-Conductor Products, Inc. | Electrical characterlitics | 127 KB | 1 | |
| BF1005E6327 | New Jersey Semi-Conductor Products, Inc. | Electrical characterlitics | 127 KB | 1 | |
| BF179 | New Jersey Semi-Conductor Products, Inc. | TRANSISTOR | BJT | NPN | 115V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF186 | New Jersey Semi-Conductor Products, Inc. | TRANSISTOR | BJT | NPN | 115V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF117 | New Jersey Semi-Conductor Products, Inc. | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 100MA I(C) | TO-39 | 282 KB | 0 | |
| BF1201 | PHILIPS SEMICONDUCTORS | N-channel dual-gate PoLo MOS-FETs | 113 KB | 16 | |
| BF1206 | PHILIPS SEMICONDUCTORS | Dual N-channel dual-gate MOS-FET | 186 KB | 21 | |
