| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BF1012S | SIEMENS SEMICONDUCTOR GROUP | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | 43 KB | 4 |  |
| BF166 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | TO-72 | 67 KB | 0 | |
| BF131 | SIEMENS SEMICONDUCTOR GROUP | TRANSISTOR | BJT | NPN | TO-72 | 67 KB | 0 | |
| BF1009SR | Infineon Technologies AG | Silicon N-Channel MOSFET Tetrode | 84 KB | 8 |  |
| BF137 | Infineon Technologies AG | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF109 | Infineon Technologies AG | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF188 | Infineon Technologies AG | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF140 | Infineon Technologies AG | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF179C | Infineon Technologies AG | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF179A | Infineon Technologies AG | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF132 | Infineon Technologies AG | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 | 102 KB | 0 | |
| BF1211 | PHILIPS SEMICONDUCTORS | N-channel dual-gate MOS-FETs | 112 KB | 15 |  |
| BF161 | PHILIPS SEMICONDUCTORS | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20MA I(C) | TO-72 | 67 KB | 0 | |
| BF1105WRT/R | PHILIPS SEMICONDUCTORS | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20MA I(C) | TO-72 | 67 KB | 0 | |
| BF140A | PHILIPS SEMICONDUCTORS | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20MA I(C) | TO-72 | 67 KB | 0 | |
| BF108 | PHILIPS SEMICONDUCTORS | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20MA I(C) | TO-72 | 67 KB | 0 | |
