型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
BF904 | NXP | N-channel dual gate MOS-FETs | 309 KB | 14 | |
BF904WR | PHILIPS SEMICONDUCTORS | N-channel dual-gate MOS-FET | 119 KB | 12 | |
BF970 | Vishay Siliconix | Silicon PNP Planar RF Transistor | 53 KB | 5 | |
BF992 | NXP | Silicon N-channel dual gate MOS-FET | 243 KB | 9 | |
BF991 | NXP | N-channel dual-gate MOS-FET | 226 KB | 7 | |
BF999 | INFINEON | Silicon N-Channel MOSFET Triode | 133 KB | 5 | |
BF960 | Vishay Telefunken | N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE | 570 KB | 10 | |
BF908 | NXP | Dual-gate MOS-FETs | 258 KB | 9 | |
BF994S | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 120 KB | 7 | |
BF989 | PHILIPS SEMICONDUCTORS | N-channel dual-gate MOS-FET | 66 KB | 8 | |
BF959 | ON SEMICONDUCTOR | VHF Transistor NPN Silicon | 53 KB | 4 | |
BF908R | NXP | Dual-gate MOS-FETs | 258 KB | 9 | |
BF996S | Vishay Siliconix | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 135 KB | 8 | |
BF961 | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 160 KB | 7 | |
BF966S | Vishay Siliconix | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | 130 KB | 8 | |
BF979 | Vishay Siliconix | Silicon PNP Planar RF Transistor | 54 KB | 5 | |