| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MTP50N06V | Inchange Semiconductor Company Limited | isc N-Channel MOSFET Transistor | 121 KB | 2 |  |
| MTP12P10G | ON SEMICONDUCTOR | Power MOSFET 12 Amps, 100 Volts P−Channel TO−220 | 78 KB | 6 |  |
| MTP2955 | MOTOROLA | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM | 116 KB | 8 |  |
| MTP36N06V | MOTOROLA | TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM | 188 KB | 8 | |
| MTP2955V | FAIRCHILD | P-Channel Enhancement Mode Field Effect Transistor | 393 KB | 5 |  |
| MTP1306 | MOTOROLA | TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM | 171 KB | 8 | |
| MTP50N06 | MOTOROLA | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM | 195 KB | 8 | |
| MTP23P06VG | MOTOROLA | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM | 195 KB | 8 | |
| MTP50P03HDLG | ON SEMICONDUCTOR | Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 | 91 KB | 8 | |
| MTP5P25 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR | 167 KB | 5 | |
| MTP6P20E | ON SEMICONDUCTOR | 是功率MOSFET设计，高能量的雪崩和减刑模式。 | 103 KB | 9 | |
| MTP5N40E | MOTOROLA | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM | 258 KB | 8 | |
| MTP75N05HD | ON SEMICONDUCTOR | Power MOSFET 75 Amps, 50 Volts | 89 KB | 8 | |
| MTP3055 | STMICROELECTRONICS | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET | 81 KB | 8 |  |
| MTP6N60E | MOTOROLA | TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS | 156 KB | 8 | |
| MTP12N10E | MOTOROLA | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM | 239 KB | 6 | |
