型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
MTP40N10E | MOTOROLA | TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM | 160 KB | 8 | |
MTP30N06VL | MOTOROLA | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM | 207 KB | 8 | |
MTP3055EL | MOTOROLA | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM | 207 KB | 8 | |
MTP10N35 | MOTOROLA | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM | 207 KB | 8 | |
MTP12N08 | MOTOROLA | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM | 207 KB | 8 | |
MTP2N35 | FAIRCHILD | N-Channel Power MOSFETs, 2.25A, 350-400V | 147 KB | 5 | |
MTP20N10E | FAIRCHILD | N-Channel Power MOSFETs, 2.25A, 350-400V | 147 KB | 5 | |
MTP15N05E | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
MTP36N06E | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
MTP8N10 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
MTP4N60 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
MTP25N10 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
MTP2N85 | MOTOROLA | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE | 172 KB | 5 | |
MTP1N60 | MOTOROLA | Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate | 175 KB | 5 | |
MTP50N06EL | MOTOROLA | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM | 232 KB | 8 | |
MTP4N45 | FAIRCHILD | N-Channel Power MOSFETs, 4.5 A, 450V/500V | 141 KB | 6 | |