型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
NE3509M04-T2-A | California Eastern Labs | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | 1277 KB | 11 | |
NE350184C-T1A | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | 269 KB | 8 | |
NE3210S01-T1 | California Eastern Labs | SUPER LOW NOISE HJ FET | 414 KB | 7 | |
NE3210S01T1B | California Eastern Labs | SUPER LOW NOISE HJ FET | 414 KB | 7 | |
NE3508M04-A | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISITOR | 1317 KB | 11 | |
NE32484A | NEC ELECTRONICS | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 55 KB | 5 | |
NE32183A | NEC ELECTRONICS | TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 12MA I(DSS) | MICRO-X
| 296 KB | 0 | |
NE32684A-T1 | NEC ELECTRONICS | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 194 KB | 5 | |
NE34018-T1/V64 | NEC ELECTRONICS | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 194 KB | 5 | |
NE3055M04 | NEC ELECTRONICS | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 194 KB | 5 | |
NE32484C-SL | NEC ELECTRONICS | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 194 KB | 5 | |
NE3512S02 | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR | 270 KB | 8 | |
NE3514S02-A | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR | 270 KB | 8 | |
NE345L-10B | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR | 270 KB | 8 | |
NE350184C | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | 269 KB | 8 | |
NE38018-T1B | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | 269 KB | 8 | |