| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| NE3512S02-A | KB | ||||
| NE3826K | KB | ||||
| NE3511S02-A | KB | ||||
| NE3508M04-T2-A | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISITOR | 1317 KB | 11 |  |
| NE3210S01-TIB | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISITOR | 1317 KB | 11 | |
| NE3510M04-A | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR | 180 KB | 11 | |
| NE3140 | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR | 180 KB | 11 | |
| NE33284A | NEC ELECTRONICS | SUPER LOW NOISE HJ FET | 53 KB | 5 |  |
| NE321000 | California Eastern Labs | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 135 KB | 6 | |
| NE32110S01-T1 | California Eastern Labs | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 135 KB | 6 | |
| NE3512S02-T1D-A | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR | 270 KB | 8 | |
| NE3005B-20 | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISTOR | 270 KB | 8 | |
| NE3508M04-T2 | California Eastern Labs | HETERO JUNCTION FIELD EFFECT TRANSISITOR | 1317 KB | 11 | |
| NE32084 | NEC ELECTRONICS | LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET | 247 KB | 7 | |
| NE32400 | NEC ELECTRONICS | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 55 KB | 5 | |
| NE3210S01-T1B/JT | NEC ELECTRONICS | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET | 55 KB | 5 | |
