| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| P280B57 | KB | ||||
| P282 | Polyfet RF Devices | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 39 KB | 2 |  |
| P28F001BXB-150 | Polyfet RF Devices | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 39 KB | 2 | |
| P28F001BXT150/120 | Polyfet RF Devices | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 39 KB | 2 | |
| P28F020-70 | Polyfet RF Devices | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 39 KB | 2 | |
| P28F010-150 | INTEL CORPORATION | 28F010 1024K (128K X 8) CMOS FLASH MEMORY | 895 KB | 33 |  |
| P28F020-150 | INTEL CORPORATION | 28F020 2048K (256K X 8) CMOS FLASH MEMORY | 878 KB | 38 | |
| P28F001BXT150 | INTEL CORPORATION | 28F020 2048K (256K X 8) CMOS FLASH MEMORY | 878 KB | 38 | |
| P28F010-120 | INTEL CORPORATION | 28F010 1024K (128K X 8) CMOS FLASH MEMORY | 895 KB | 33 | |
| P2804NVG | List of Unclassifed Manufacturers | N- & P-Channel Enhancement Mode Field Effect Transistor | 518 KB | 8 |  |
| P28F001 | List of Unclassifed Manufacturers | N- & P-Channel Enhancement Mode Field Effect Transistor | 518 KB | 8 | |
| P28F001BX-T150 | INTEL CORPORATION | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY | 436 KB | 33 | |
| P28F002BCT120 | INTEL CORPORATION | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY | 436 KB | 33 | |
| P28F512-150 | INTEL CORPORATION | 512K(64Kx8)CMOS FLASH MEMORY | 1819 KB | 30 | |
| P28F256A-150 | INTEL CORPORATION | x8 Flash EEPROM | 1754 KB | 0 | |
| P28F020-200 | INTEL CORPORATION | x8 Flash EEPROM | 1754 KB | 0 | |
