| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PDTA124EE | NXP | PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ | 181 KB | 14 |  |
| PDT1008 | Nihon Inter Electronics Corporation | THYRISTOR MODULE 100A / 800V | 259 KB | 5 |  |
| PDT608 | Nihon Inter Electronics Corporation | THYRISTOR MODULE 60A/800V | 253 KB | 5 | |
| PDTA144WU | NXP | Low VCEsat (BISS) transistors | 948 KB | 12 | |
| PDTA114TU | NXP | Low VCEsat (BISS) transistors | 948 KB | 12 | |
| PDT1508 | NXP | Low VCEsat (BISS) transistors | 948 KB | 12 | |
| PDT308 | Nihon Inter Electronics Corporation | THYRISTOR MODULE 30A Avg 800 Volts | 243 KB | 4 | |
| PDTA124EK | PHILIPS SEMICONDUCTORS | PNP resistor-equipped transistor | 67 KB | 8 |  |
| PDTC144WT | NXP | NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ | 189 KB | 14 | |
| PDT10016 | Nihon Inter Electronics Corporation | THYRISTOR MODULE 100A/1200 to 1600V | 324 KB | 5 | |
| PDTC143TM | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open | 180 KB | 14 |  |
| PDTC143ZK | PHILIPS SEMICONDUCTORS | NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW | 93 KB | 14 | |
| PDTC123ET | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ | 188 KB | 14 | |
| PDT2008 | Nihon Inter Electronics Corporation | THYRISTOR MODULE 200A / 800V | 265 KB | 5 | |
| PDTC143TE | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open | 180 KB | 14 | |
| PDT15016 | Nihon Inter Electronics Corporation | 150A Avg 1200~1600 Volts | 248 KB | 4 | |
