型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
PDTC143ZT | NXP | Low VCEsat (BISS) transistors | 948 KB | 12 | |
PDTA114YE | NXP | PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ | 181 KB | 14 | |
PDTC114TU | NXP | Low VCEsat (BISS) transistors | 948 KB | 12 | |
PDTC144EEF | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ | 188 KB | 14 | |
PDTC143ZE | PHILIPS SEMICONDUCTORS | NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW | 93 KB | 14 | |
PDTA123ET | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ | 189 KB | 14 | |
PDTA123JT | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ | 181 KB | 14 | |
PDTC115EE | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 188 KB | 14 | |
PDT508 | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 188 KB | 14 | |
PDTA143TU | NXP Semiconductors | PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open | 173 KB | 14 | |
PDTA143ZT | NXP | Low VCEsat (BISS) transistors | 948 KB | 12 | |
PDT258 | NXP | Low VCEsat (BISS) transistors | 948 KB | 12 | |
PDTC115EK | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ | 188 KB | 14 | |
PDTA114TE | NXP | PNP resistor-equipped transistors; R1 = 10 kW, R2 = open | 88 KB | 11 | |
PDT15012 | Nihon Inter Electronics Corporation | 150A Avg 1200~1600 Volts | 248 KB | 4 | |
PDT908 | Nihon Inter Electronics Corporation | 150A Avg 1200~1600 Volts | 248 KB | 4 | |