| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RFM6P10 | ETC | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS | 445 KB | 8 |  |
| RFM10N45 | INTERSIL CORPORATION | 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs | 31 KB | 4 |  |
| RFM12P10 | INTERSIL CORPORATION | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-3 | 39 KB | 0 | |
| RFM15N05 | ETC | POWER LOGIC LEVEL MOSFETS | 227 KB | 4 | |
| RFMMT717TA | ETC | POWER LOGIC LEVEL MOSFETS | 227 KB | 4 | |
| RFM PCB | ETC | POWER LOGIC LEVEL MOSFETS | 227 KB | 4 | |
| RFM25N06 | ETC | POWER MOS FIELD EFFECT TRANSISTORS | 235 KB | 4 | |
| RFMD9233 | ETC | POWER MOS FIELD EFFECT TRANSISTORS | 235 KB | 4 | |
| RFM10P12L | ETC | POWER MOS FIELD EFFECT TRANSISTORS | 235 KB | 4 | |
| RFM10P15 | GE Solid State | P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS | 249 KB | 4 |  |
| RFM5P15 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 |  |
| RFMD08K67 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFMD08K68 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFMT-9 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFM10N15 | GE Solid State | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | 216 KB | 4 | |
| RFM15N15 | GE Solid State | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS | 238 KB | 4 | |
