| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RFM8N18 | ETC | N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS | 232 KB | 4 |  |
| RFMD9511 | ETC | N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS | 232 KB | 4 | |
| RFM00U7U(TE85L.F) | ETC | N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS | 232 KB | 4 | |
| RFM12N35 | INTERSIL CORPORATION | 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs | 31 KB | 4 |  |
| RFM12N40 | INTERSIL CORPORATION | 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs | 31 KB | 4 | |
| RFM15N06 | INTERSIL CORPORATION | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-3 | 39 KB | 0 | |
| RFM5P12 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 |  |
| RFMIC1001 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFM6N50 | Mospec Semiconductor | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-3 | 39 KB | 0 | |
| RFM6P08 | ETC | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS | 445 KB | 8 | |
| RFM4N35 | INTERSIL CORPORATION | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs | 38 KB | 4 | |
| RFM4N40 | INTERSIL CORPORATION | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs | 38 KB | 4 | |
| RFM12U7X(TE12L.Q) | INTERSIL CORPORATION | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs | 38 KB | 4 | |
| RFM12N20 | INTERSIL CORPORATION | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs | 35 KB | 4 | |
| RFM3N50 | INTERSIL CORPORATION | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs | 81 KB | 10 | |
| RFM6N45 | INTERSIL CORPORATION | 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs | 32 KB | 4 | |
