型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
RFP14N06L | INTERSIL CORPORATION | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | 83 KB | 8 | |
RFP2P10 | INTERSIL CORPORATION | -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs | 39 KB | 5 | |
RFP3N50 | INTERSIL CORPORATION | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs | 81 KB | 10 | |
RFPIC12F675F-I/SS | INTERSIL CORPORATION | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs | 81 KB | 10 | |
RFP2N15 | INTERSIL CORPORATION | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs | 35 KB | 5 | |
RFP-250250-4AA20-1 | INTERSIL CORPORATION | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs | 35 KB | 5 | |
RFP4N35 | INTERSIL CORPORATION | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs | 38 KB | 4 | |
RFP2N12L | INTERSIL CORPORATION | 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET | 35 KB | 5 | |
RFP8N18 | ETC | N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS | 232 KB | 4 | |
RFP15N12 | GE Solid State | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS | 238 KB | 4 | |
RFP2N12L136 | GE Solid State | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS | 238 KB | 4 | |
RFP12N06 | FAIRCHILD | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | 215 KB | 10 | |
RFP30N06 | FAIRCHILD | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | 215 KB | 10 | |
RFP50N06R4747 | FAIRCHILD | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | 215 KB | 10 | |
RFP8P08 | HARRIS CORPORATION | -8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS | 279 KB | 5 | |
RFP12N60 | HARRIS CORPORATION | -8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS | 279 KB | 5 | |