| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RFP-4191 | KB | ||||
| RFP10P12 | GE Solid State | P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS | 249 KB | 4 |  |
| RFPIC12F675K-I/SS | GE Solid State | P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS | 249 KB | 4 | |
| RFPIC12F675H-I/SS | GE Solid State | P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS | 249 KB | 4 | |
| RFP10N15L | GE Solid State | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-220AB | 38 KB | 0 | |
| RFP17N06L | GE Solid State | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-220AB | 38 KB | 0 | |
| RFP5P15 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 |  |
| RFP25N06L | Mospec Semiconductor | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220AB | 38 KB | 0 | |
| RFP10N12 | GE Solid State | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | 216 KB | 4 | |
| RFP50N60 | GE Solid State | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | 216 KB | 4 | |
| RFP30N05 | GE Solid State | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | 216 KB | 4 | |
| RFP-20-50TP | Anaren Microwave | Flanged Terminations | 503 KB | 2 |  |
| RFP47N10 | Anaren Microwave | Flanged Terminations | 503 KB | 2 | |
| RFP-4228 | Anaren Microwave | Flanged Terminations | 503 KB | 2 | |
| RFP-4391 | Anaren Microwave | Flanged Terminations | 503 KB | 2 | |
| RFPIC12C509AG-I/SO | Anaren Microwave | Flanged Terminations | 503 KB | 2 | |
