| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BAS40-05E-6327 | KB | ||||
| BAS40215 | KB | ||||
| BAS7007E6327 | KB | ||||
| BAS70L | NXP | General-purpose Schottky diodes | 224 KB | 20 |  |
| BAT30JFILM | STMICROELECTRONICS | Small signal Schotky diodes | 157 KB | 12 |  |
| BAT85TRPRFMD | STMICROELECTRONICS | Small signal Schotky diodes | 157 KB | 12 | |
| BAV993N49E | STMICROELECTRONICS | Small signal Schotky diodes | 157 KB | 12 | |
| BAV99TA | STMICROELECTRONICS | Small signal Schotky diodes | 157 KB | 12 | |
| BB301MAW-TL-E | RENESAS | Built in Biasing Circuit MOS FET IC VHF RF Amplifier | 181 KB | 8 |  |
| BB3626BP | RENESAS | Built in Biasing Circuit MOS FET IC VHF RF Amplifier | 181 KB | 8 | |
| BB659CE7902 | RENESAS | Built in Biasing Circuit MOS FET IC VHF RF Amplifier | 181 KB | 8 | |
| BBOPA2343UA | RENESAS | Built in Biasing Circuit MOS FET IC VHF RF Amplifier | 181 KB | 8 | |
| BC100 | RENESAS | Built in Biasing Circuit MOS FET IC VHF RF Amplifier | 181 KB | 8 | |
| BC208 | RENESAS | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-106 | 647 KB | 0 | |
| BC212015BQN-E4 | RENESAS | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-106 | 647 KB | 0 | |
| BC212B/D26Z | RENESAS | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-106 | 647 KB | 0 | |
