| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BD779 | KB | ||||
| BD939F | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 112 KB | 2 |  |
| BD948F | Inchange Semiconductor Company Limited | isc Silicon PNP Power Transistor | 115 KB | 2 | |
| BD951 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 111 KB | 2 | |
| BD9883AF | Rohm | Silicon Monolithic Integrated Circuit | 156 KB | 5 |  |
| BDGLA16NB | Agere Systems | QUAD DIFFERENTIAL DRIVERS | 255 KB | 16 |  |
| BDT42B | Inchange Semiconductor Company Limited | isc Silicon PNP Power Transistors | 117 KB | 2 | |
| BDV67C | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors | 135 KB | 3 | |
| BDW54 | Bourns Electronic Solutions | PNP SILICON POWER DARLINGTONS | 120 KB | 5 |  |
| BDY18 | Bourns Electronic Solutions | PNP SILICON POWER DARLINGTONS | 120 KB | 5 | |
| BDY74 | Inchange Semiconductor Company Limited | isc Silicon NPN Power Transistor | 214 KB | 2 | |
| BDY90P | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | TO-3 | 115 KB | 0 | |
| BDY94 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | 11 KB | 1 |  |
| BF2000 | SIEMENS SEMICONDUCTOR GROUP | Silicon N Channel MOSFET Tetrode | 19 KB | 3 |  |
| BF410D | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BF587 | PHILIPS SEMICONDUCTORS | NPN high-voltage transistors | 63 KB | 8 |  |
