型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
APT50M50JLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
APT30D120BG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 131 KB | 4 | |
APT12GT60KR | Advanced Power Technology | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. | 25 KB | 2 | |
APT15D120K | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 122 KB | 4 | |
APT15D30K | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 116 KB | 4 | |
APT10030L2VFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 79 KB | 2 | |
APT1001RBLC | Advanced Power Technology | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 35 KB | 2 | |
APT10025JLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 35 KB | 2 | |
APT102GA60B2 | MICROSEMI CORPORATION | High Speed PT IGBT | 232 KB | 6 | |
APT10M09B2VFR | Advanced Power Technology | POWER MOS V FREDFET | 149 KB | 4 | |
APT100S20B | MICROSEMI CORPORATION | HIGH VOLTAGE SCHOTTKY DIODE | 196 KB | 4 | |
APT10053lnr | MICROSEMI CORPORATION | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 20A I(D) | TO-264AA
| 100 KB | 0 | |
APT1003RKLL | Advanced Power Technology | POWER MOS 7 MOSFET | 95 KB | 5 | |
APT10035JFLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 94 KB | 5 | |
APT1221 | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 94 KB | 5 | |
APT30GP60BDF1 | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 94 KB | 5 | |