| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT30D60BG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 132 KB | 4 |  |
| APT2X61DQ60J | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 147 KB | 4 | |
| APT2X30DQ60J | MICROSEMI CORPORATION | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 443 KB | 4 |  |
| APT15GP90BDF1 | MICROSEMI CORPORATION | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 443 KB | 4 | |
| APT20GT60CR | Advanced Power Technology | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. | 28 KB | 2 | |
| APT20M11JLL | Advanced Power Technology | POWER MOS 7 MOSFET | 169 KB | 5 | |
| APT13GP120BG | Advanced Power Technology | POWER MOS 7 IGBT | 409 KB | 6 | |
| APT15DQ60B | MICROSEMI CORPORATION | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 260 KB | 4 | |
| APT12040L2LL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS | 64 KB | 2 | |
| APT12045L2VFR | Advanced Power Technology | POWER MOS V | 129 KB | 4 | |
| APT100GF60JU2 | MICROSEMI CORPORATION | Boost chopper NPT IGBT | 431 KB | 9 | |
| APT10M09B2VR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 39 KB | 2 | |
| APT10M11B2VR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 63 KB | 4 | |
| APT10M30AVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 66 KB | 4 | |
| APT10086SVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 69 KB | 4 | |
| APT10078SFLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 202 KB | 5 | |
