型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
MGF4914D | MITSUBISHI ELECTRIC SEMICONDUCTOR | TAPE CARRIER SUPER LOW NOISE INGAAS HEMT | 579 KB | 10 | |
MGF9001-22 | MITSUBISHI ELECTRIC SEMICONDUCTOR | TAPE CARRIER SUPER LOW NOISE INGAAS HEMT | 579 KB | 10 | |
MGF4919G | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 22 KB | 3 | |
MGF4931AM-01 | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 22 KB | 3 | |
MGF7132BP-25 | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 22 KB | 3 | |
MGF7103-21 | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 22 KB | 3 | |
MGFL45V1920C | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 22 KB | 3 | |
MGF4714CP | MITSUBISHI ELECTRIC SEMICONDUCTOR | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | 17 KB | 3 | |
MGF7104-21 | MITSUBISHI ELECTRIC SEMICONDUCTOR | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | 17 KB | 3 | |
MGF0913A-01 | MITSUBISHI ELECTRIC SEMICONDUCTOR | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | 17 KB | 3 | |
MGF4916G-65 | MITSUBISHI ELECTRIC SEMICONDUCTOR | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | 17 KB | 3 | |
MGF0909A | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET(small signal gain stage) | 115 KB | 3 | |
MGF0906B | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 180 KB | 4 | |
MGF0904A | MITSUBISHI ELECTRIC SEMICONDUCTOR | L,S BAND POWER GaAs FET | 637 KB | 3 | |
MGF0913A | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 113 KB | 4 | |
MGF1902B65 | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 113 KB | 4 | |